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| MMBT3906T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904T) Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A C TOP VIEW B G H K M E BC SOT-523 Dim A B C D G N Min 0.15 0.75 1.45 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0 Max 0.30 0.85 1.75 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8 Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 Mechanical Data * * * * * * * * * Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) Terminal Connections: See Diagram Marking Information: 3N, See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.002 grams (approximate) H J J D L K L M N C B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC (Note 1) (Note 1) Pd RJA Tj, TSTG Value -40 -40 -5.0 -200 150 833 -55 to +150 Unit V V V mA mW C/W C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30271 Rev. 8 - 2 1 of 4 www.diodes.com MMBT3906T (c) Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 60 80 100 60 30 -0.65 2.0 0.1 100 3.0 250 Max -50 -50 300 -0.25 -0.40 -0.85 -0.95 4.0 Unit V V V nA nA Test Condition IC = -10A, IE = 0 IC = -1.0mA, IB = 0 IE = -10A, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100A, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCE = -5.0Vdc, IC = 100Adc, RS = 1.0k, f = 1.0kHz VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 -4 DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Noise Figure SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 5. Short duration pulse test used to minimize self-heating effect. VCE(SAT) VBE(SAT) NF V V dB Cobo Cibo hie hre hfe hoe fT td tr ts tf 4.5 10 12 10 400 60 35 35 225 75 pF pF k x 10 S MHz VCE = 1.0V, IC = 10mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA ns ns ns ns 250 100 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 200 150 10 100 50 0 0 80 120 160 40 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve 200 1 0.1 1 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2 Typical Input and Output Capacitance vs. Collector-Base Voltage DS30271 Rev. 8 - 2 2 of 4 www.diodes.com MMBT3906T (c) Diodes Incorporated 1,000 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 10 hFE, DC CURRENT GAIN 1 100 10 0.1 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1,000 0.01 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 0.1 0.1 10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 1,000 Ordering Information (Note 6) Device MMBT3906T-7-F Notes: Packaging SOT-523 Shipping 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 3N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 3NYM Date Code Key Year Code Month Code DS30271 Rev. 8 - 2 2002 N Jan 1 2003 P Feb 2 2004 R Mar 3 2005 S Apr 4 2006 T May 5 3 of 4 Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D MMBT3906T www.diodes.com (c) Diodes Incorporated IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30271 Rev. 8 - 2 4 of 4 www.diodes.com MMBT3906T (c) Diodes Incorporated |
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